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M13S2561616A-4BG2T

ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC

M13S2561616A-4BG2T Datasheet
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC M13S2561616A-4BG2T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    8
  • Access Mode
    FOUR BANK PAGE BURST
  • Length (mm)
    13
  • JESD-30 Code
    R-PBGA-B60
  • Memory Width
    16
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    DDR1 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    8192
  • Number of Ports
    1
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Memory Organization
    16MX16
  • Number of Functions
    1
  • Number of Terminals
    60
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    0.7
  • Number of Words Code
    16M
  • Memory Density (bits)
    268435456
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    2.7
  • Supply Voltage-Min (V)
    2.4
  • Supply Voltage-Nom (V)
    2.5
  • Number of Words (words)
    16777216
  • Sequential Burst Length
    2,4,8
  • Standby Current-Max (A)
    0.006
  • Supply Current-Max (mA)
    230
  • Package Equivalence Code
    BGA60,6X12,32
  • Clock Frequency-Max (MHz)
    250
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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M13S2561616A-4BG2T