M12L64164A-5BG2Y
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionSynchronous DRAM, 4MX16, 5ns, CMOS, PBGA54
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)8
- Access ModeFOUR BANK PAGE BURST
- Length (mm)8
- JESD-30 CodeS-PBGA-B54
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization4MX16
- Number of Functions1
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)5
- Number of Words Code4M
- Memory Density (bits)67108864
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)4194304
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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M12L64164A-5BG2Y