M12L2561616A-6BVAG2A
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- Lifecycle statusActive
- DescriptionSynchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)8
- Access ModeFOUR BANK PAGE BURST
- Length (mm)8
- JESD-30 CodeS-PBGA-B54
- Memory Width16
- Package CodeVFBGA
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO REFRESH
- Memory Organization16MX16
- Number of Functions1
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)5.4
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)16777216
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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M12L2561616A-6BVAG2A