LTE42012R
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionTransistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- Number of Elements1
- Polarity/Channel TypeNPN
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)800 A
- Power Dissipation-Max (Abs)8 W
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LTE42012R
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LTE42012R