LT1839
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max0.8 V
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-39
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.3 A
- Power Dissipation-Max (Abs)3 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max70 V
- Transition Frequency-Nom (fT)1000 MHz
- Collector-base Capacitance-Max2.5 pF
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LT1839