LT1814
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max0.8 V
- JESD-30 CodeO-CRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.4 A
- Power Dissipation-Max (Abs)5 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max120 V
- Transition Frequency-Nom (fT)1000 MHz
- Collector-base Capacitance-Max4 pF
0 suppliers available to buy or to bid for LT1814
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
LT1814
Send an RFQ
LT1814