LP1016EE
MSI ELECTRONICS INC
- Lifecycle statusDiscontinued
- DescriptionVariable Capacitance Diode, Ultra High Frequency, 3pF C(T), 25V, Silicon, Abrupt
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeVARIABLE CAPACITANCE DIODE
- JESD-30 CodeX-CXMW-F3
- ConfigurationCOMMON ANODE, 2 ELEMENTS
- Package ShapeUNSPECIFIED
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- Frequency BandULTRA HIGH FREQUENCY
- Terminal PositionUNSPECIFIED
- Additional FeatureLOW INDUCTANCE
- Number of Elements2
- Quality Factor-Min900
- Number of Terminals3
- Reverse Current-Max2.0E-8 uA
- Qualification StatusNot Qualified
- Reverse Test Voltage20 V
- Breakdown Voltage-Min25 V
- Diode Capacitance-Nom3 pF
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Power Dissipation-Max5 W
- Diode Element MaterialSILICON
- Operating Temperature-Max175 Cel
- Rep Pk Reverse Voltage-Max25 V
- Diode Capacitance Ratio-Min4.1
- Variable Capacitance Diode ClassificationABRUPT
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