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LMV861MGE

NATIONAL SEMICONDUCTOR CORP

NATIONAL SEMICONDUCTOR CORP LMV861MGE
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.33.00.01
  • SB Code
    8542.33.00.00
  • Power
    NO
  • Low-Bias
    YES
  • Wideband
    NO
  • Low-Offset
    NO
  • Micropower
    NO
  • Technology
    CMOS
  • Width (mm)
    1.25
  • Length (mm)
    2
  • JESD-30 Code
    R-PDSO-G5
  • Package Code
    TSSOP
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Amplifier Type
    OPERATIONAL AMPLIFIER
  • J-STD-609 Code
    e0
  • Packing Method
    TAPE AND REEL
  • Terminal Finish
    TIN LEAD
  • Amp Architecture
    VOLTAGE-FEEDBACK
  • Voltage Gain-Min
    70800
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    AUTOMOTIVE
  • Terminal Position
    DUAL
  • Programmable Power
    NO
  • Number of Functions
    1
  • Number of Terminals
    5
  • Terminal Pitch (mm)
    0.65
  • Slew Rate-Nom (V/us)
    18
  • Package Body Material
    PLASTIC/EPOXY
  • Frequency Compensation
    YES
  • Seated Height-Max (mm)
    1.1
  • Supply Voltage-Nom (V)
    3.3
  • Supply Current-Max (mA)
    3.27
  • Unity Gain BW-Nom (kHz)
    30000
  • Package Equivalence Code
    TSSOP5/6,.08
  • Moisture Sensitivity Level
    1
  • Supply Voltage Limit-Max (V)
    6
  • Input Offset Voltage-Max (uV)
    1260
  • Peak Reflow Temperature (Cel)
    260
  • Negative Supply Voltage-Nom (V)
    0
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -40
  • Common-mode Reject Ratio-Nom (dB)
    93
  • Average Bias Current-Max (IIB) (uA)
    0.0005
  • Time@Peak Reflow Temperature-Max (s)
    40

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LMV861MGE
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LMV861MGE