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LH65-50

OSI LASER DIODE INC

OSI LASER DIODE INC LH65-50
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    904
  • Response Time-Max (s)
    2.0E-8
  • Semiconductor Material
    GaAs
  • Forward Voltage-Max (V)
    35
  • Spectral Bandwidth (nm)
    3.5
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    55
  • Operating Temperature-Min (Cel)
    -55

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LH65-50
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LH65-50