LBSS139DW1T3G
Leshan Radio Co. Ltd.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSmall Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)0.2
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)50
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max (ohm)3.5
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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LBSS139DW1T3G
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LBSS139DW1T3G