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LAF163

OSI LASER DIODE INC

OSI LASER DIODE INC LAF163
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    850
  • Response Time-Max (s)
    1.0E-9
  • Semiconductor Material
    GaAs
  • Forward Voltage-Max (V)
    19
  • Spectral Bandwidth (nm)
    10
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    60
  • Operating Temperature-Min (Cel)
    -20

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LAF163
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LAF163