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LA410

OSI LASER DIODE INC

OSI LASER DIODE INC LA410
  • ECCN
    3A001.a.2.b
  • ECCN Governance
    EAR
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    850
  • Response Time-Max (s)
    5.0E-10
  • Semiconductor Material
    GaAlAs
  • Forward Current-Max (A)
    40
  • Forward Voltage-Max (V)
    31
  • Spectral Bandwidth (nm)
    3.5
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    -195

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LA410
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LA410