L9D112G80BG4E8
LOGIC DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR DRAM Module, 16MX16, 0.8ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)25
- Access ModeFOUR BANK PAGE BURST
- Length (mm)25
- JESD-30 CodeS-XDMA-N219
- Memory Width16
- Package CodeBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization16MX16
- Number of Functions1
- Number of Terminals219
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)0.8
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Seated Height-Max (mm)2.5
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)16777216
- Sequential Burst Length2,4,8
- Standby Current-Max (A)0.025
- Supply Current-Max (mA)1920
- Interleaved Burst Length2,4,8
- Package Equivalence CodeBGA219,16X16,50
- Clock Frequency-Max (MHz)125
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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L9D112G80BG4E8