KSH127-TF
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max4 V
- JESD-30 CodeR-PSSO-G2
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)100
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)8 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max100 V
- Power Dissipation Ambient-Max20 W
- Collector-base Capacitance-Max300 pF
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KSH127-TF