KSH127
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)100
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)8 A
- Power Dissipation-Max (Abs)20 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max100 V
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KSH127
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KSH127