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KM718S049G-75

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. KM718S049G-75
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B119
  • Memory Width
    18
  • Package Code
    BGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    ZBT SRAM
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    1MX18
  • Number of Terminals
    119
  • Terminal Pitch (mm)
    1.27
  • Access Time-Max (ns)
    4.2
  • Number of Words Code
    1M
  • Memory Density (bits)
    18874368
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    2.5
  • Number of Words (words)
    1048576
  • Standby Current-Max (A)
    0.03
  • Standby Voltage-Min (V)
    2.38
  • Supply Current-Max (mA)
    280
  • Package Equivalence Code
    BGA119,7X17,50
  • Clock Frequency-Max (MHz)
    133
  • Moisture Sensitivity Level
    3
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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KM718S049G-75
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KM718S049G-75