KM44V1004CLLJ-7
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionEDO DRAM, 1MX4, 70ns, CMOS, PDSO20
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width7.62 mm
- Length17.145 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFAST PAGE WITH EDO
- JESD-30 CodeR-PDSO-J20
- Memory Width4
- Organization1MX4
- Package CodeSOJ
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density4194304 bit
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles1024
- Terminal Pitch1.27 mm
- Access Time-Max70 ns
- Number of Ports1
- Number of Words1048576 words
- Terminal FinishTin/Lead (Sn/Pb)
- Seated Height-Max3.68 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
- Supply Current-Max55 mA
- Number of Functions1
- Number of Terminals20
- Standby Current-Max0.0001 Amp
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeSOJ20/26,.34
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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