KM44C4103BS-7
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionFast Page DRAM, 4MX4, 70ns, CMOS, PDSO24
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width7.62 mm
- Length17.14 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFAST PAGE
- JESD-30 CodeR-PDSO-G24
- Memory Width4
- Organization4MX4
- Package CodeTSOP2
- Self RefreshNO
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density16777216 bit
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles2048
- Terminal Pitch1.27 mm
- Access Time-Max70 ns
- Number of Ports1
- Number of Words4194304 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Supply Current-Max90 mA
- Number of Functions1
- Number of Terminals24
- Standby Current-Max0.001 Amp
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeTSOP28,.46
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
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