KM432D5131TQ-G0 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. KM432D5131TQ-G0

Lifecycle status
Discontinued
Description
DDR1 DRAM, 512KX32, 6.5ns, CMOS, PQFP100
Category
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Access Mode
FOUR BANK PAGE BURST
Length (mm)
20
JESD-30 Code
R-PQFP-G100
Memory Width
32
Package Code
TQFP
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
FLATPACK, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
1024
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Additional Feature
AUTO/SELF REFRESH
Memory Organization
512KX32
Number of Functions
1
Number of Terminals
100
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
6.5
Number of Words Code
512K
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
524288
Sequential Burst Length
2,4,8,FP
Standby Current-Max (A)
0.002
Supply Current-Max (mA)
260
Interleaved Burst Length
2,4,8
Package Equivalence Code
TQFP100,.7X.9,25
Clock Frequency-Max (MHz)
100
Operating Temperature-Max (Cel)
65
Operating Temperature-Min (Cel)
0