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KM418RD4C-G60

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. KM418RD4C-G60
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • Technology
    CMOS
  • Width (mm)
    7.6
  • Access Mode
    BLOCK ORIENTED PROTOCOL
  • Length (mm)
    12.6
  • JESD-30 Code
    R-PBGA-B74
  • Memory Width
    18
  • Package Code
    TFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    RAMBUS DRAM
  • Operating Mode
    SYNCHRONOUS
  • Number of Ports
    1
  • DLA Qualification
    Not Qualified
  • Terminal Position
    BOTTOM
  • Additional Feature
    SELF REFRESH
  • Memory Organization
    4MX18
  • Number of Functions
    1
  • Number of Terminals
    74
  • Terminal Pitch (mm)
    0.75
  • Access Time-Max (ns)
    53.3
  • Number of Words Code
    4M
  • Memory Density (bits)
    75497472
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.2
  • Supply Voltage-Max (V)
    2.63
  • Supply Voltage-Min (V)
    2.37
  • Supply Voltage-Nom (V)
    2.5
  • Number of Words (words)
    4194304

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KM418RD4C-G60
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KM418RD4C-G60