KM416RD8C-RM80 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. KM416RD8C-RM80

Lifecycle status
Discontinued
Description
Rambus DRAM, 8MX16, CMOS, PBGA62
Category
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
11.5
Access Mode
BLOCK ORIENTED PROTOCOL
Length (mm)
13.15
JESD-30 Code
R-PBGA-B62
Memory Width
16
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
RAMBUS DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH
Memory Organization
8MX16
Number of Functions
1
Number of Terminals
62
Terminal Pitch (mm)
0.8
Number of Words Code
8M
Memory Density (bits)
134217728
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
2.63
Supply Voltage-Min (V)
2.37
Supply Voltage-Nom (V)
2.5
Number of Words (words)
8388608
Package Equivalence Code
BGA62,12X9,40/32
Clock Frequency-Max (MHz)
800