KFWAGH6U4M-DIB60
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionFlash, 1GX16, 76ns, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeMLC NAND TYPE
- Width10 mm
- Length13 mm
- Page Size2K words
- Boot BlockINDEPENDENT
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Sector Size256K Words
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width16
- Organization1GX16
- Package CodeLFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density17179869184 bit
- Memory IC TypeFLASH
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max76 ns
- Number of Words1073741824 words
- Parallel/SerialPARALLEL
- Seated Height-Max1.4 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
- Supply Current-Max50 mA
- Number of Functions1
- Number of Terminals63
- Programming Voltage3.3 V
- Standby Current-Max0.00016 Amp
- Number of Words Code1G
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size4K
- Package Equivalence CodeBGA63,10X12,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3.3 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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KFWAGH6U4M-DIB60