KFH4G16Q2M-DEB6S
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionFlash, 256MX16, 76ns, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Page Size1K words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Sector Size64K Words
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width16
- Organization256MX16
- Package CodeFBGA
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density4294967296 bit
- Memory IC TypeFLASH
- Terminal Pitch0.8 mm
- Access Time-Max76 ns
- Number of Words268435456 words
- Parallel/SerialPARALLEL
- Terminal FinishMATTE TIN
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max38 mA
- Number of Terminals63
- Standby Current-Max0.0001 Amp
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size4K
- Package Equivalence CodeBGA63,10X12,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-30 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Moisture Sensitivity Level1
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KFH4G16Q2M-DEB6S