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KFG1216D2A-FIB60

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. KFG1216D2A-FIB60
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Width
    9.5 mm
  • Length
    12 mm
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B63
  • Memory Width
    16
  • Organization
    32MX16
  • Package Code
    VFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    536870912 bit
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    76 ns
  • Number of Words
    33554432 words
  • Parallel/Serial
    PARALLEL
  • Seated Height-Max
    1 mm
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Additional Feature
    SYNCHRONOUS BURST OPERATION IS POSSIBLE
  • Number of Functions
    1
  • Number of Terminals
    63
  • Programming Voltage
    2.7 V
  • Number of Words Code
    32M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -40 Cel
  • Supply Voltage-Max (Vsup)
    2.9 V
  • Supply Voltage-Min (Vsup)
    2.4 V
  • Supply Voltage-Nom (Vsup)
    2.65 V

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KFG1216D2A-FIB60