K9WAG08U1M-IIB0
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionFlash, 2GX8, 25ns
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Width (mm)12
- Length (mm)17
- Data PollingNO
- JESD-30 CodeR-XBGA-N52
- Memory Width8
- Package CodeLGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormNO LEAD
- J-STD-609 Codee3
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Page Size (words)2K
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization2GX8
- Number of Functions1
- Number of Terminals52
- Sector Size (words)128K
- Access Time-Max (ns)25
- Number of Words Code2G
- Memory Density (bits)17179869184
- Package Body MaterialUNSPECIFIED
- Command User InterfaceYES
- Number of Sectors/Size16K
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.7
- Supply Voltage-Nom (V)3.3
- Number of Words (words)2147483648
- Programming Voltage (V)2.7
- Standby Current-Max (A)0.0001
- Supply Current-Max (mA)35
- Package Equivalence CodeLGA52(UNSPEC)
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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K9WAG08U1M-IIB0