K9F2816U0C-DIB0
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionFlash, 8MX16, 30ns, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Width9 mm
- Length11 mm
- Page Size256 words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Sector Size8K Words
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width16
- Organization8MX16
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density134217728 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max30 ns
- Number of Words8388608 words
- Parallel/SerialSERIAL
- Seated Height-Max1 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureCONTAINS ADDITIONAL 4M BIT NAND FLASH
- Supply Current-Max20 mA
- Number of Functions1
- Number of Terminals63
- Programming Voltage2.7 V
- Standby Current-Max5.0E-5 Amp
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size1K
- Package Equivalence CodeBGA63,10X12,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3.3 V
0 suppliers available to buy or to bid for K9F2816U0C-DIB0
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
K9F2816U0C-DIB0
Send an RFQ
K9F2816U0C-DIB0