K9F1G08U0A-JIB00
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionFlash, 128MX8, 20ns, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Width (mm)9.5
- Length (mm)12
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Package CodeTFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Page Size (words)2K
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization128MX8
- Number of Functions1
- Number of Terminals63
- Sector Size (words)128K
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)20
- Number of Words Code128M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size1K
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.7
- Supply Voltage-Nom (V)3.3
- Number of Words (words)134217728
- Programming Voltage (V)2.7
- Standby Current-Max (A)5.0E-5
- Supply Current-Max (mA)30
- Package Equivalence CodeBGA63,10X12,32
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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