K9F1208U0C-PIB0
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionFLASH MEMORY
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- Width12 mm
- Length18.4 mm
- Page Size512 words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Sector Size16K Words
- Data PollingNO
- JESD-30 CodeR-PDSO-G48
- Memory Width8
- Organization64MX8
- Package CodeTSOP1
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density536870912 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.5 mm
- Access Time-Max30 ns
- Number of Words67108864 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN BISMUTH
- Seated Height-Max1.2 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Supply Current-Max20 mA
- Number of Functions1
- Number of Terminals48
- Programming Voltage3.3 V
- Standby Current-Max5.0E-5 Amp
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size4K
- Package Equivalence CodeTSSOP48,.8,20
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3.3 V
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
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