K9F1208Q0A-DIB0
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionFlash, 64MX8, 30ns, PBGA63
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- Width9 mm
- Length11 mm
- Page Size512 words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Sector Size16K Words
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Organization64MX8
- Package CodeVFBGA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max30 ns
- Number of Words67108864 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- Seated Height-Max1 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureCONTAINS ADDITIONAL 16M BIT NAND FLASH
- Supply Current-Max15 mA
- Number of Functions1
- Number of Terminals63
- Programming Voltage1.8 V
- Standby Current-Max5.0E-5 Amp
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size4K
- Package Equivalence CodeBGA63,10X12,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.65 V
- Supply Voltage-Nom (Vsup)1.8 V
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