K8S6615EBD-SC7B0
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionFlash, 4MX16, 70ns, PBGA44
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- Boot BlockBOTTOM
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B44
- Memory Width16
- Organization4MX16
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density67108864 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.5 mm
- Access Time-Max70 ns
- Number of Words4194304 words
- Parallel/SerialPARALLEL
- Seated Height-Max1 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureBOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
- Number of Functions1
- Number of Terminals44
- Programming Voltage1.8 V
- Number of Words Code4M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
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K8S6615EBD-SC7B0