K8S5515EBC-SE1D0
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionFlash, 16MX16, 100ns, PBGA44
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Boot BlockBOTTOM
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitYES
- Width (mm)6.2
- Length (mm)7.7
- Data PollingYES
- JESD-30 CodeR-PBGA-B44
- Memory Width16
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS/SYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureBOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
- Memory Organization16MX16
- Number of Functions1
- Number of Terminals44
- Sector Size (words)16K,64K
- Terminal Pitch (mm)0.5
- Access Time-Max (ns)100
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Common Flash InterfaceY
- Number of Sectors/Size4,255
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)16777216
- Programming Voltage (V)1.8
- Standby Current-Max (A)0.00012
- Supply Current-Max (mA)70
- Endurance (Write/Erase Cycles)100000
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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