K8S3215ETD-DI7BT
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionFlash, 2MX16, 90ns, PBGA44
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeNOR TYPE
- Boot BlockTOP
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitYES
- Sector Size4K,32K Words
- Data PollingYES
- JESD-30 CodeR-PBGA-B44
- Memory Width16
- Organization2MX16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density33554432 bit
- Memory IC TypeFLASH
- Terminal Pitch0.5 mm
- Access Time-Max90 ns
- Number of Words2097152 words
- Parallel/SerialPARALLEL
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Supply Current-Max55 mA
- Number of Terminals44
- Standby Current-Max3.0E-5 Amp
- Number of Words Code2M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Common Flash InterfaceYES
- Number of Sectors/Size8,63
- Package Equivalence CodeBGA44,8X14,20
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Nom (Vsup)1.8 V
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