K8S1115EZC-DC1ET
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionFlash, 32MX16, 95ns, PBGA64
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeNOR TYPE
- TechnologyCMOS
- Toggle BitYES
- Data PollingYES
- JESD-30 CodeR-PBGA-B64
- Memory Width16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee3
- Memory IC TypeFLASH
- Parallel/SerialPARALLEL
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Memory Organization32MX16
- Number of Terminals64
- Sector Size (words)64K
- Terminal Pitch (mm)0.5
- Access Time-Max (ns)95
- Number of Words Code32M
- Memory Density (bits)536870912
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Common Flash InterfaceYES
- Number of Sectors/Size512
- Supply Voltage-Nom (V)1.8
- Number of Words (words)33554432
- Programming Voltage (V)2.7
- Standby Current-Max (A)3.0E-5
- Supply Current-Max (mA)70
- Package Equivalence CodeBGA64,10X14,20
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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