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K8F1315EBM-FC1D0

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K8F1315EBM-FC1D0
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Width
    9 mm
  • Length
    11 mm
  • Boot Block
    BOTTOM
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B64
  • Memory Width
    16
  • Organization
    32MX16
  • Package Code
    VFBGA
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    536870912 bit
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Terminal Pitch
    0.5 mm
  • Access Time-Max
    110 ns
  • Number of Words
    33554432 words
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN LEAD
  • Seated Height-Max
    1 mm
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    BOTTOM
  • Additional Feature
    SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE
  • Number of Functions
    1
  • Number of Terminals
    64
  • Programming Voltage
    1.8 V
  • Number of Words Code
    32M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Max
    70 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    1.95 V
  • Supply Voltage-Min (Vsup)
    1.7 V
  • Supply Voltage-Nom (Vsup)
    1.8 V

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K8F1315EBM-FC1D0