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K8C5415ETM-DC1ET

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K8C5415ETM-DC1ET
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Boot Block
    TOP
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Width (mm)
    10.5
  • Length (mm)
    14
  • Data Polling
    YES
  • JESD-30 Code
    R-PBGA-B167
  • Memory Width
    16
  • Package Code
    LFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, LOW PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS/SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Terminal Position
    BOTTOM
  • Memory Organization
    16MX16
  • Number of Functions
    1
  • Number of Terminals
    167
  • Sector Size (words)
    16K,64K
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    100
  • Number of Words Code
    16M
  • Memory Density (bits)
    268435456
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Common Flash Interface
    YES
  • Number of Sectors/Size
    4,255
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1.4
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    16777216
  • Programming Voltage (V)
    1.8
  • Standby Current-Max (A)
    0.00011
  • Supply Current-Max (mA)
    70
  • Package Equivalence Code
    BGA167,12X15,32
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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K8C5415ETM-DC1ET