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K8A6415ETB-DE7B0

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K8A6415ETB-DE7B0
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Technology
    CMOS
  • JESD-30 Code
    X-PBGA-B
  • Memory Width
    16
  • Package Code
    BGA
  • Package Shape
    UNSPECIFIED
  • Package Style
    GRID ARRAY Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Additional Feature
    SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
  • Memory Organization
    4MX16
  • Number of Functions
    1
  • Access Time-Max (ns)
    90
  • Number of Words Code
    4M
  • Memory Density (bits)
    67108864
  • Package Body Material
    PLASTIC/EPOXY
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    4194304
  • Programming Voltage (V)
    1.8
  • Moisture Sensitivity Level
    3
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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K8A6415ETB-DE7B0