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K7R641884M-EI25T

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K7R641884M-EI25T
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    SEPARATE
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B165
  • Memory Width
    18
  • Package Code
    BGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    STANDARD SRAM
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN SILVER COPPER
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    4MX18
  • Number of Terminals
    165
  • Terminal Pitch (mm)
    1
  • Access Time-Max (ns)
    0.45
  • Number of Words Code
    4M
  • Memory Density (bits)
    75497472
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Number of Words (words)
    4194304
  • Standby Voltage-Min (V)
    1.7
  • Package Equivalence Code
    BGA165,11X15,40
  • Clock Frequency-Max (MHz)
    250
  • Moisture Sensitivity Level
    3
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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K7R641884M-EI25T