K7R641882M-EI160 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K7R641882M-EI160

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
QDR SRAM, 4MX18, 0.5ns, CMOS, PBGA165
Category
Semiconductors Memory ICs SRAMs QDR SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
Width (mm)
15
Length (mm)
17
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
QDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
4MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.5
Number of Words Code
4M
Memory Density (bits)
75497472
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
4194304
Standby Voltage-Min (V)
1.7
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
166
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED