K7P401823M-HC75T by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K7P401823M-HC75T

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Application Specific SRAM, 256KX18, 7.5ns, CMOS, PBGA119
Category
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B119
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
256KX18
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
7.5
Number of Words Code
256K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
262144
Standby Current-Max (A)
0.06
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
450
Package Equivalence Code
BGA119,7X17,50
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0