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K7N803649B-QI22

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K7N803649B-QI22
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • Width (mm)
    14
  • Length (mm)
    20
  • JESD-30 Code
    R-PQFP-G100
  • Memory Width
    36
  • Package Code
    LQFP
  • Package Shape
    RECTANGULAR
  • Package Style
    FLATPACK, LOW PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e0
  • Memory IC Type
    ZBT SRAM
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    QUAD
  • Additional Feature
    PIPELINED ARCHITECTURE
  • Memory Organization
    256KX36
  • Number of Functions
    1
  • Number of Terminals
    100
  • Terminal Pitch (mm)
    0.65
  • Access Time-Max (ns)
    2.8
  • Number of Words Code
    256K
  • Memory Density (bits)
    9437184
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.6
  • Supply Voltage-Max (V)
    2.625
  • Supply Voltage-Min (V)
    2.375
  • Supply Voltage-Nom (V)
    2.5
  • Number of Words (words)
    262144
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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K7N803649B-QI22