K7N803609B-PC25 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K7N803609B-PC25

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
ZBT SRAM, 256KX36, 2.6ns, CMOS, PQFP100
Category
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PQFP-G100
Memory Width
36
Package Code
QFP
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Memory Organization
256KX36
Number of Terminals
100
Terminal Pitch (mm)
0.635
Access Time-Max (ns)
2.6
Number of Words Code
256K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
262144
Standby Current-Max (A)
0.06
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
470
Package Equivalence Code
QFP100,.63X.87
Clock Frequency-Max (MHz)
250
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0