K7N161831B-QI16 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K7N161831B-QI16

Lifecycle status
Discontinued
Description
ZBT SRAM, 1MX18, 3.5ns, CMOS, PQFP100
Category
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PQFP-G100
Memory Width
18
Package Code
QFP
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
QUAD
Memory Organization
1MX18
Number of Terminals
100
Terminal Pitch (mm)
0.635
Access Time-Max (ns)
3.5
Number of Words Code
1M
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
1048576
Standby Current-Max (A)
0.13
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
300
Package Equivalence Code
QFP100,.63X.87
Clock Frequency-Max (MHz)
167
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40