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K7M403625M-QC90

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K7M403625M-QC90
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Memory Width
    36
  • J-STD-609 Code
    e0
  • Memory IC Type
    ZBT SRAM
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Memory Organization
    128KX36
  • Access Time-Max (ns)
    9
  • Number of Words Code
    128K
  • Memory Density (bits)
    4718592
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Number of Words (words)
    131072
  • Standby Current-Max (A)
    0.03
  • Standby Voltage-Min (V)
    3.14
  • Supply Current-Max (mA)
    260
  • Clock Frequency-Max (MHz)
    83
  • Moisture Sensitivity Level
    3
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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K7M403625M-QC90
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K7M403625M-QC90