K4X1G163PC-LGC30
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionDDR1 DRAM, 64MX16, 6ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)11
- Access ModeFOUR BANK PAGE BURST
- Length (mm)11.5
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals60
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)6
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)67108864
- Sequential Burst Length2,4,8,16
- Standby Current-Max (A)2.5E-5
- Supply Current-Max (mA)135
- Interleaved Burst Length2,4,8,16
- Package Equivalence CodeBGA60,9X10,32
- Clock Frequency-Max (MHz)133
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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K4X1G163PC-LGC30