K4U52324QE-BC08
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionGDDR4 DRAM, 16MX32, 0.19ns, CMOS, PBGA136
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B136
- Memory Width32
- Organization16MX32
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeGDDR4 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.19 ns
- Number of Words16777216 words
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max1044 mA
- Number of Terminals136
- Standby Current-Max0.123 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length8
- Interleaved Burst Length8
- Package Equivalence CodeBGA136,12X17,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)1200 MHz
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K4U52324QE-BC08