K4T51163QM-GCC4 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4T51163QM-GCC4

Lifecycle status
Discontinued
REACH
REACH compliant
Description
DDR2 DRAM, 32MX16, 0.6ns, CMOS, PBGA84
Category
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
12.3
Access Mode
FOUR BANK PAGE BURST
Length (mm)
14.5
JESD-30 Code
R-PBGA-B84
Memory Width
16
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
32MX16
Number of Functions
1
Number of Terminals
84
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.6
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
33554432
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0