K4T51163QJ-BCF80 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4T51163QJ-BCF80

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
DDR2 DRAM, 32MX16, 0.35ns, CMOS, PBGA84
Category
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Access Mode
FOUR BANK PAGE BURST
Length (mm)
12.5
JESD-30 Code
R-PBGA-B84
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
32MX16
Number of Functions
1
Number of Terminals
84
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.35
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
33554432
Sequential Burst Length
4,8
Standby Current-Max (A)
0.008
Supply Current-Max (mA)
200
Interleaved Burst Length
4,8
Package Equivalence Code
BGA84,9X15,32
Clock Frequency-Max (MHz)
533
Moisture Sensitivity Level
2
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0