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K4T51163QB-GCE6

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4T51163QB-GCE6
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.28
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B84
  • Memory Width
    16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    DDR2 DRAM
  • Refresh Cycles
    8192
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    BOTTOM
  • Memory Organization
    32MX16
  • Number of Terminals
    84
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    0.45
  • Number of Words Code
    32M
  • Memory Density (bits)
    536870912
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    33554432
  • Sequential Burst Length
    4,8
  • Interleaved Burst Length
    4,8
  • Package Equivalence Code
    BGA84,9X15,32
  • Clock Frequency-Max (MHz)
    333

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K4T51163QB-GCE6