K4T51083QB-GLE6
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionDDR2 DRAM, 64MX8, 0.45ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B60
- Memory Width8
- Organization64MX8
- Package CodeFBGA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeDDR2 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.45 ns
- Number of Words67108864 words
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Number of Terminals60
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA60,9X11,32
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)333 MHz
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K4T51083QB-GLE6