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K4T1G044QE-HLE6

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4T1G044QE-HLE6
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • Width
    7.5 mm
  • Length
    9.5 mm
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Access Mode
    MULTI BANK PAGE BURST
  • JESD-30 Code
    R-PBGA-B60
  • Memory Width
    4
  • Organization
    256MX4
  • Package Code
    TFBGA
  • Self Refresh
    YES
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    1073741824 bit
  • Memory IC Type
    DDR2 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    0.45 ns
  • Number of Ports
    1
  • Number of Words
    268435456 words
  • Terminal Finish
    MATTE TIN
  • Seated Height-Max
    1.2 mm
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Supply Current-Max
    150 mA
  • Number of Functions
    1
  • Number of Terminals
    60
  • Number of Words Code
    256M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    4,8
  • Interleaved Burst Length
    4,8
  • Package Equivalence Code
    BGA60,9X11,32
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    1.9 V
  • Supply Voltage-Min (Vsup)
    1.7 V
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • Clock Frequency-Max (fCLK)
    333 MHz
  • Moisture Sensitivity Level
    1

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K4T1G044QE-HLE6